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View 2sj289 datasheet:

2sj2892sj289

Ordering number : ENN66092SJ289P-Channel Silicon MOSFET2SJ289Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A Low-voltage drive.[2SJ289]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.75 2 : Drain3 : SourceSpecificationsSANYO : PCPAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --100 VGate-to-Source Voltage VGSS 15 VDrain Current (DC) ID --500 mADrain Current (Pulse) IDP PW10s, duty cycle1% --1 AMounted on a ceramic board (250mm2 0.8mm) 1.3 WAllowable Power Dissipation PDTc=25C 3.5 WChannel Temperature Tch 150 CStorage Temperature Tstg --55 to +150 CElectrical Characteristics at Ta=25CRatingsParameter Symbol Conditions Unitmin typ maxDrain-to-Source Breakdow

 

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 2sj289.pdf Design, MOSFET, Power

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