View 2sj292 datasheet:

2SJ292Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratingsOutlineTO-220AB1D231. Gate G2. Drain (Flange) 3. SourceS2SJ292Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS 60 VGate to source voltage VGSS 20 VDrain current ID 30 ADrain peak current ID(pulse)*1 120 ABody to drain diode reverse drain current IDR 30 AAvalanche current IAP*3 30 AAvalanche energy EAR*3 77 mJChannel dissipation Pch*2 75 WChannel temperature Tch 150 CStorage temperature Tstg 55 to +150 CNotes 1. PW 10 s, duty cycle 1%2. Value at TC = 25C

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