View 2sj305 datasheet:

2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Unit: mm Analog Applications High input impedance Low gate threshold voltage.: V = -0.5~-1.5 V th Excellent switching times.: t = 0.06 s (typ.) ont = 0.15 s (typ.) off Low drain-source ON resistance: R = 2.4 (typ.) DS (ON) Small package. Complementary to 2SK2009 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS -30 VGate-source voltage VGSS 20 VJEDEC TO-236MODDC drain current ID -200 mAJEITA SC-59Drain power dissipation PD 200 mWTOSHIBA 2-3F1FChannel temperature Tch 150 CWeight: 0.012 g (typ.) Storage temperature range Tstg -55~150 CNote: This transistor is electrostatic sensitive device. Please handle with caution. Marking Equivalent C

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