View 2sj312 datasheet:

2SJ312 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSIV) 2SJ312 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 80 m (typ.) DS (ON) High forward transfer admittance : |Y | = 8.0 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -60 V) DS Enhancement-mode : V = -0.8~-2.0 V (V = -10 V, I = -1 mA) th DS DMaximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS -60 VDrain-gate voltage (RGS = 20 k) VDGR -60 V Gate-source voltage VGSS 20 VDC (Note 1) ID -14 Drain current A Pulse (Note 1) IDP -56 Drain power dissipation (Tc = 25C) PD 40 WJEDEC Channel temperature Tch 150 CJEITA Storage temperature range Tstg -55~150 CTOSHIBA 2-10S1BWeight: 1.5 g (typ.) Thermal Chara

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