View 2sj313 datasheet:

2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -180 V High forward transfer admittance : |Y | = 0.7 S (typ.) fs Complementary to 2SK2013 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS -180 VGate-source voltage VGSS 20 VDrain current (Note 1) ID -1 APower dissipation (Tc = 25C) PD 25 WChannel temperature Tch 150 CStorage temperature range Tstg -55~150 CJEDEC Marking JEITA SC-67TOSHIBA 2-10R1BWeight: 1.9 g (typ.) Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max UnitGate leakage current IGSS VDS = 0, VGS = 20 V 100 nADrain-source breakdown voltage V (BR) DSS ID = -10 mA, VGS = 0 -180 VGate-source cut-off vol

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