View 2sj342 datasheet:

2SJ342 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ342 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.8~-2.5 V High speed Enhancement-mode Small package Complementary to 2SK1825 Equivalent Circuit Maximum Ratings (Ta == 25C) ==JEDEC Characteristics Symbol Rating UnitJEITA TOSHIBA 2-4E1EDrain-source voltage VDS -50 VGate-source voltage VGSS -7 VWeight: 0.13 g (typ.) DC drain current ID -50 mADrain power dissipation PD 300 mWChannel temperature Tch 150 CStorage temperature range Tstg -55~150 CElectrical Characteristics (Ta == 25C) ==Characteristics Symbol Test Condition Min Typ. Max UnitGateate leakage current IGSS VGS = -7 V, VDS = 0 -1 A Drain-source breakdown voltage V (BR) DSS ID = -100 A, VGS = 0

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