View 2sj345 datasheet:

2SJ345 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ345 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.5~-1.5 V High speed Small package Complementary to 2SK1828 Marking Equivalent CircuitMaximum Ratings (Ta == 25C) ==JEDEC TO-236MODJEITA SC-59Characteristics Symbol Rating UnitTOSHIBA 2-3F1FDrain-source voltage VDS -20 VWeight: 0.012 g (typ.) Gate-source voltage VGSS -7 VDC drain current ID -50 mADrain power dissipation PD 200 mWChannel temperature Tch 150 CStorage temperature range Tstg -55~150 CElectrical Characteristics (Ta == 25C) ==Characteristics Symbol Test Condition Min Typ. Max UnitGateate leakage current IGSS VGS = -7 V, VDS = 0 -1 A Drain-source breakdown voltage V (BR) DSS ID = -100 A, VGS = 0 -20

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