View 2sj347 datasheet:

2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Unit: mm Analog Switch Applications Low threshold voltage: Vth = -0.5~-1.5 V High speed Small package Complementary to 2SK1830 Marking Equivalent CircuitMaximum Ratings (Ta = = 25C) ==JEDEC Characteristics Symbol Rating UnitJEITA Drain-source voltage VDS -20 VTOSHIBA 2-2H1BGate-source voltage VGSS -7 VWeight: 2.4 mg (typ.) DC drain current ID -50 mADrain power dissipation PD 100 mWChannel temperature Tch 150 CStorage temperature range Tstg -55~150 CElectrical Characteristics (Ta == 25C) ==Characteristics Symbol Test Condition Min Typ. Max UnitGateate leakage current IGSS VGS = -7 V, VDS = 0 -1 A Drain-source breakdown voltage V (BR) DSS ID = -100 A, VGS = 0 -20 V

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