View 2sj349 datasheet:

2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ349 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON-resistance : RDS (ON) = 33 m (typ.) High forward transfer admittance : |Yfs| = 20 S (typ.) Low leakage current : IDSS = -100 A (max) (VDS = -60 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS -60 VDrain-gate voltage (RGS = 20 k) VDGR -60 V Gate-source voltage VGSS 20 VDC (Note 1) ID -20 ADrain current Pulse (Note 1) IDP -80 AJEDEC Drain power dissipation (Tc = 25C) PD 45 WJEITA SC-67Single pulse avalanche energy EAS 800 mJ(Note 2)TOSHIBA 2-10R1BAvalanche current IAR -20 AWeight: 1.9 g (typ.) Repetitive a

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