View 2sj358 datasheet:

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ358P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHPackage Drawings (unit: mm)The 2SJ358 is a P-channel vertical MOS FET that can5.7 0.1be used as a switching element. The 2SJ358 can be1.5 0.12.0 0.2directly driven by an IC operating at 5 V.The 2SJ358 features a low on-resistance and excellentswitching characteristics, and is suitable for applicationssuch as actuator driver and DC/DC converter.1 2 30.5 0.10.5 0.1FEATURES0.4 0.052.10.85 0.1 New-type compact package4.2Has advantages of packages for small signals and forpower transistors, and compensates those disadvan-Equivalent CircuittagesDrain (D) Can be directly driven by an IC operating at 5 V. Low on-resistanceElectrode Connection 1. SourceRDS(ON) = 0.40 MAX. @VGS = 4 V, ID = 1.5 AGate (G)Internal 2.

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