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View 2sj360 datasheet:

2sj3602sj360

2SJ360 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSV) 2SJ360 High Speed, High current Switching Applications Unit: mmChopper Regulator, DC-DC Converter and Motor Drive Applications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 0.55 (typ.) High forward transfer admittance : |Yfs| = 0.9 S (typ.) Low leakage current : IDSS = -100 A (max) (VDS = -60 V) Enhancement mode : Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS -60 VDrain-gate voltage (RGS = 20 k ) VDGR -60 V Gate-source voltage VGSS 20 VDC (Note 1) ID -1 ADrain current Pulse (Note 1) IDP -4 ADrain power dissipation PD 0.5 W JEDEC Drain power dissipation (Note 2) PD 1.5 WJEITA SC-62Channel temperature Tch 150 CTOSHIBA 2-5K1

 

Keywords - ALL TRANSISTORS DATASHEET

 2sj360.pdf Design, MOSFET, Power

 2sj360.pdf RoHS Compliant, Service, Triacs, Semiconductor

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