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2sj3872sj387

2SJ387(L), 2SJ387(S) Silicon P Channel MOS FET REJ03G0862-0200 (Previous: ADE-208-1196) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C(Package name: DPAK (L)-(2) ) (Package name: DPAK (S) )44D1. Gate12 2. DrainG33. Source4. Drain123SRev.2.00 Sep 07, 2005 page 1 of 7 2SJ387(L), 2SJ387(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Value UnitDrain to source voltage V 20 VDSSGate to source voltage V 10 VGSSDrain current I 10 ADDrain peak current I Note 1 40 AD (pulse)Body to drain diode reverse drain current I 10 ADRChannel di

 

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 2sj387.pdf Design, MOSFET, Power

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