View 2sj462 datasheet:

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ462P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR HIGH SPEED SWITCHINGDESCRIPTION Package Drawings (unit : mm)The 2SJ462 is a switching device which can be driven directly5.7 0.1by an IC operating at 3 V.1.5 0.12.0 0.2The 2SJ462 features a low on-state resistance and can bedriven by a low voltage power source, so it is suitable for applica-tions such as power management.1 2 3FEATURES0.5 0.1 0.5 0.1 Can be driven by a 2.5 V power source.0.4 0.05 New-type compact package. 2.10.85 0.14.2Has advantages of packages for small signals and for powertransistors, and compensates those disadvantages. Low on-state resistance.Equivalent CircuitRDS(ON) : 0.29 MAX. @VGS = 2.5 V, ID = 0.5 ARDS(ON) : 0.19 MAX. @VGS = 4.0 V, ID = 1.0 AElectrodeConnectionDrainABSOLUT

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