View 2sj471 datasheet:

2SJ471Silicon P Channel DVL MOS FETHigh Speed Power SwitchingADE-208-5401st. EditionFeatures Low on-resistanceRDS(on) = 25 m typ. 4V gate drive devices. High speed switchingOutlineTO220CFMDG1231. Gate2. DrainS 3. Source2SJ471Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS 30 VGate to source voltage VGSS 20 VDrain current ID 30 ADrain peak current ID(pulse)Note1 120 ABody to drain diode reverse drain current IDR 30 AChannel dissipation Pch Note2 30 WChannel temperature Tch 150 CStorage temperature Tstg 55 to +150 CNotes: 1. PW 10 s, duty cycle 1 %2. Value at Tc = 25 C22SJ471Electrical Characteristics (Ta = 25C)Item Symbol Min Typ Max Unit Test ConditionsDrain to source breakdown V(BR)DSS 30 V ID = 10m

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