View 2sj494 datasheet:

DATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SJ494SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEPACKAGE DIMENSIONSDESCRIPTION(in millimeter)This product is P-Channel MOS Field Effect Transistordesigned for high current switching applications.4.50.210.00.33.20.22.70.2FEATURES Super Low On-State ResistanceRDS(on)1 = 50 m Max. (VGS = 10 V, ID = 10 A)RDS(on)2 = 88 m Max. (VGS = 4 V, ID = 10 A) Low Ciss Ciss = 2360 pF Typ. Built-in Gate Protection Diode0.70.1 1.30.2 2.50.11.50.20.650.12.54 2.54ABSOLUTE MAXIMUM RATINGS (TA = 25C)Drain to Source Voltage VDSS 60 V1. Gate2. DrainGate to Source Voltage* VGSS (AC) +20 V3. SourceGate to Source Voltage VGSS (DC) 20, 0 V 1 2 3Drain Current (DC) ID (DC) +20 A ISOLATED TO-220 (MP-45F)Drain Current (pulse)** ID (pulse) +8

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