View 2sj495 datasheet:

DATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SJ495SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEDESCRIPTION PACKAGE DIMENSIONSThis product is P-Channel MOS Field Effect Transistor (in millimeter)designed for high current switching applications.10.0 0.3 4.5 0.23.2 0.22.7 0.2FEATURES Super Low On-State ResistanceRDS(on)1 = 30 m MAX. (VGS = 10 V, ID = 15 A)RDS(on)2 = 56 m MAX. (VGS = 4 V, ID = 15 A) Low Ciss Ciss = 4120 pF TYP. Built-in Gate Protection DiodeABSOLUTE MAXIMUM RATINGS (TA = 25C)Drain to Source Voltage VDSS 60 VGate to Source Voltage* VGSS(AC) m20 V0.7 0.1 1.3 0.2 2.5 0.1Gate to Source Voltage VGSS(DC) 20, 0 V1.5 0.20.65 0.1Drain Current (DC) ID(DC) m30 A2.54 2.54Drain Current (pulse)** ID(pulse) m120 A1. GateTotal Power Dissipation (TC = 25C) PT 35 W 2. Dr

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