View 2sj496 datasheet:

2SJ496 Silicon P Channel MOS FET REJ03G0870-0300 (Previous: ADE-208-482A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.12 typ. (at VGS = 10 V, ID = 2.5 A) 4 V gate drive devices. Large current capacitance ID = 5 A Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)D1. SourceG2. Drain3. Gate321SRev.3.00 Sep 07, 2005 page 1 of 7 2SJ496 Absolute Maximum Ratings (Ta = 25C) Item Symbol Value UnitDrain to source voltage V 60 VDSSGate to source voltage V 20 VGSSDrain current I 5 ADDrain peak current I Note 1 20 AD (pulse)Body to drain diode reverse drain current I 5 ADRAvalanche current I Note 3 5 AAPAvalanche energy E Note 3 2.14 mJARChannel dissipation Pch Note 2 0.9 WChannel temperat

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