View 2sj505 datasheet:

2SJ505(L), 2SJ505(S) Silicon P Channel MOS FET REJ03G0872-0500 Rev.5.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.017 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK (L) ) (Package name: LDPAK (S)-(1) )D441. Gate2. DrainG3. Source4. Drain123123SRev.5.00 Jun 05, 2006 page 1 of 8 2SJ505(L), 2SJ505(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Value UnitDrain to source voltage VDSS 60 VGate to source voltage VGSS 20 VDrain current ID 50 ADrain peak current ID (pulse) Note 1 200 ABody to drain diode reverse drain current IDR 50 AAvalanche current IAP Note 3 50 AAvalanche energy EAR Note 3 214 mJ

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