View 2sj506 datasheet:

2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET REJ03G0873-0500 (Previous: ADE-208-548C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.065 typ. (at VGS = 10 V, ID = 5 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C(Package name: DPAK (L)-(2) ) (Package name: DPAK (S) )44D1. Gate2. DrainG123. Source34. Drain123SRev.5.00 Sep 07, 2005 page 1 of 7 2SJ506(L), 2SJ506(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Value UnitDrain to source voltage V 30 VDSSGate to source voltage V 20 VGSSDrain current I 10 ADDrain peak current I Note 1 40 AD (pulse)Body to drain diode reverse drain current I 10 ADRChannel

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