View 2sj518 datasheet:

2SJ518 Silicon P Channel MOS FET REJ03G0875-0400 (Previous: ADE-208-580B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.35 typ. (at VGS = 10 V, ID = 1 A) Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code: PLZZ0004CA-AR(Package name: UPAK )D121. Gate32. DrainG3. Source4. Drain4SNote: Marking is AZ. *UPAK is a trademark of Renesas Technology Corp. Rev.4.00 Sep 07, 2005 page 1 of 6 2SJ518 Absolute Maximum Ratings (Ta = 25C) Item Symbol Value UnitDrain to source voltage V 60 VDSSGate to source voltage V 20 VGSSDrain current I 2 ADDrain peak current I Note 1 4 AD (pulse)Body to drain diode reverse drain current I 2 ADRAvalanche current I Note 2 2 AAP

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