View 2sj526 datasheet:

2SJ526 Silicon P Channel MOS FET REJ03G0876-0600 Rev.6.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.11 typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)D1. GateG2. Drain3. Source123SRev.6.00 Jun 05, 2006 page 1 of 7 2SJ526 Absolute Maximum Ratings (Ta = 25C) Item Symbol Value UnitDrain to source voltage VDSS 60 VGate to source voltage VGSS 20 VDrain current ID 12 ADrain peak current ID (pulse) Note 1 48 ABody to drain diode reverse drain current IDR 12 AAvalanche current IAP Note 3 12 AAvalanche energy EAR Note 3 12 mJChannel dissipation Pch Note 2 25 WChannel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1.

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