View 2sj529 datasheet:

2SJ529(L), 2SJ529(S) Silicon P Channel MOS FET REJ03G0879-0300 (Previous: ADE-208-654A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.12 typ. 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C(Package name: DPAK (L)-(2) ) (Package name: DPAK (S) )44D1. Gate12 2. DrainG33. Source4. Drain123SRev.3.00 Sep 07, 2005 page 1 of 8 2SJ529(L), 2SJ529(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Value UnitDrain to source voltage V 60 VDSSGate to source voltage V 20 VGSSDrain current I 10 ADDrain peak current I Note 1 40 AD (pulse)Body to drain diode reverse drain current I 10 ADRAvalanche current I Note 3 10 AAPAvalanche energy E Note 3 8

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