View 2sj529s datasheet:

INCHANGE Semiconductorisc P-Channel MOSFET Transistor 2SJ529SFEATURESWith TO-252(DPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage -60 VDSSV Gate-Source Voltage 20 VGSSI Drain Current-Continuous -10 ADI Drain Current-Single Pulsed -40 ADMP Total Dissipation 20 WDT Operating Junction Temperature -55~150 jStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 1.2/WRth(ch-a) Channel-to-ambient thermal resistance 501isc websitewww.iscsemi.cn isc

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