View 2sj530 datasheet:

2SJ530(L), 2SJ530(S) Silicon P Channel MOS FET REJ03G0880-0500 (Previous: ADE-208-655C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.08 typ. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C(Package name: DPAK (L)-(2) ) (Package name: DPAK (S) )44D1. Gate12 2. DrainG33. Source4. Drain123SRev.5.00 Sep 07, 2005 page 1 of 8 2SJ530(L), 2SJ530(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Value UnitDrain to source voltage V 60 VDSSGate to source voltage V 20 VGSSDrain current I 15 ADDrain peak current I Note 1 60 AD (pulse)Body to drain diode reverse drain current I 15 ADRAvalanche current I Note 3 15 AAPAvalanche energy E Note 3

Keywords - ALL TRANSISTORS DATASHEET

 2sj530.pdf Design, MOSFET, Power

 2sj530.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sj530.pdf Database, Innovation, IC, Electricity