View 2sj539 datasheet:

2SJ539 Silicon P Channel MOS FET REJ03G0886-0300 (Previous: ADE-208-657A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.16 typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2. Drain (Flange)3. Source123SRev.3.00 Sep 07, 2005 page 1 of 7 2SJ539 Absolute Maximum Ratings (Ta = 25C) Item Symbol Value UnitDrain to source voltage V 60 VDSSGate to source voltage V 20 VGSSDrain current I 10 ADDrain peak current I Note 1 40 AD (pulse)Body to drain diode reverse drain current I 10 ADRAvalanche current I Note 3 10 AAPAvalanche energy E Note 3 8.5 mJARChannel dissipation Pch Note 2 40 WChannel temperature Tch 150 C Sto

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