View 2sk1612 datasheet:

Power F-MOS FETs 2SK16122SK1612Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2High avalanche energy capability5.5 0.2 2.7 0.2VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.1 0.1 ApplicationsHigh-speed switching (switching mode regulator)1.3 0.2 1.4 0.1For high-frequency power amplification+0.20.5 -0.10.8 0.1 Absolute Maximum Ratings (Tc = 25C)Parameter Symbol Rating Unit2.54 0.25Drain-Source breakdown voltage VDSS 900 V5.08 0.5Gate-Source voltage VGSS 30 V1 2 3DC ID 3 ADrain currentPulse IDP 6 A 1 : Gate2 : DrainAvalanche energy capability EAS* 15 mJ3 : SourceTC = 25C 50Allowable power TO-220 Full Pack Package (a)PD WdissipationTa = 25C 2Channel temperature Tch 150 CStorage temperature Tstg 55 to +150 C* Single pulse Absolute

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