View 2sk1961 datasheet:

Ordering number:ENN4502N-Channel Junction Silicon FET2SK1961High-Frequency Low-NoiseAmplifier ApplicationsApplications Package Dimensions High-frequency low-noise amplifier applications. unit:mm2019BFeatures [2SK1961]5.0 Adoption of FBET process.4.04.0 Large | yfs |. Small Ciss. Ultralow noise figure.0.450.50.440.451 : Source2 : Gate3 : Drain1 2 3SANYO : NPJEDEC : TO-921.3 1.3EIAJ : SC-43SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSX 15 VGate-to-Drain Voltage VGDS 15 VGate Current IG 10 mADrain Current ID 100 mAAllowable Power Dissipation PD 500 mWJunction Temperature Tj 150 CStorage Temperature Tstg 55 to +150 CElectrical Characteristics at Ta = 25CRatingsParameter Symbol Conditions Unitmin typ maxGate

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