View 2sk1968 datasheet:

2SK1968 Silicon N Channel MOS FET REJ03G0989-0200 (Previous: ADE-208-1337) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching No secondary breakdown Suitable for switching regulator Low drive current Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D1. GateG2. Drain(Flange)3. Source1S23Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1968 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 600 VGate to source voltage V 30 VGSSDrain current ID 12 ADrain peak current I *1 48 AD(pulse)Body to drain diode reverse drain current IDR 12 AChannel dissipation Pch*2 100 WChannel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1 % 2

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