View 2sk2495 datasheet:

Power F-MOS FETs 2SK24952SK2495Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed3.4 0.38.5 0.26.0 0.5 1.0 0.1High-speed switchingNo secondary breakdown Applications1.5max. 1.1max.High-speed switching (switching mode regulator)For high-frequency power amplification0.8 0.1 0.5max.2.54 0.35.08 0.5 Absolute Maximum Ratings (Tc = 25C)1 2 3Parameter Symbol UnitRating1 : GateDrain-Source breakdown voltage VDSS V2502 : DrainGate-Source voltage VGSS V303 : SourceDC ID A2 N Type PackageDrain currentPulse IDP A4Avalanche energy capability EAS * mJ10TC= 25C30Allowable powerPD WdissipationTa= 25C1.3Channel temperature Tch C150Storage temperature Tstg 55 to +150C* L= 5mH, IL= 2A, VDD= 30V, 1 pulse Electrical Characteristics (Tc = 25C)

Keywords - ALL TRANSISTORS DATASHEET

 2sk2495.pdf Design, MOSFET, Power

 2sk2495.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sk2495.pdf Database, Innovation, IC, Electricity