View 2sk3161 datasheet:

2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1086-0300 (Previous: ADE-208-734A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =90 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(L)) (Package name: LDPAK(S)-(1))4D41. GateG2. Drain3. Source4. Drain12312S3Rev.3.00 Sep 07, 2005 page 1 of 8 2SK3161 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 200 VGate to source voltage VGSS 20 VDrain current ID 15 ADrain peak current ID(pulse)Note1 60 ABody-drain diode reverse drain current IDR 15 AAvalanche current IAP Note3 15 AAvalanche energy EAR Note3 15 mJChannel dissipation Pch Note

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