View 2sk3162 datasheet:

2SK3162 Silicon N Channel MOS FET High Speed Power Switching REJ03G1087-0400 (Previous: ADE-208-735C) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS = 60 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)DG1. Gate2. Drain3. Source1S23Rev.4.00 Sep 07, 2005 page 1 of 7 2SK3162 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 200 VGate to source voltage VGSS 20 VDrain current ID 20 ADrain peak current ID(pulse)Note1 80 ABody-drain diode reverse drain current IDR 20 AAvalanche current IAP Note3 20 AAvalanche energy EAR Note3 26 mJChannel dissipation Pch Note2 35 WChannel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW

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