View 2sk3210 datasheet:

2SK3210(L), 2SK3210(S)Silicon N Channel MOS FETHigh Speed Power SwitchingREJ03G0414-0300(Previous ADE-208-760A (Z))Rev.3.00Sep. 30, 2004Features Low on-resistanceRDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V sourceOutlineLDPAKD4 41. Gate2. DrainG3. Source4. Drain123123SAbsolute Maximum Ratings(Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS 150 VGate to source voltage VGSS 20 VDrain current ID 30 ADrain peak current ID (pulse)Note1 120 ABody-drain diode reverse drain current IDR 30 AAvalanche current IAPNote3 30 AAvalanche energy EARNote3 67 mJChannel dissipation PchNote2 100 WChannel temperature Tch 150 C Storage temperature Tstg 55 to +150 CNotes: 1. PW 10ms, duty cycle 1 %2. Value at Tc = 25C3. Value at Tch = 25C,

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