View 2sk3211 datasheet:

2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1091-0400 Rev.4.00 May 15, 2006 Features Low on-resistance RDS = 60 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(L)) (Package name: LDPAK(S)-(1))4 D41. GateG2. Drain3. Source4. Drain12312 S3Rev.4.00 May 15, 2006 page 1 of 8 2SK3211(L), 2SK3211(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 200 VGate to source voltage VGSS 20 VDrain current ID 25 ADrain peak current ID(pulse)Note1 100 ABody-drain diode reverse drain current IDR 25 AAvalanche current IAP Note3 25 AAvalanche energy EAR Note3 41 mJChannel dissipation Pch Note2 100 WCha

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