View 2sk3212 datasheet:

2SK3212 Silicon N Channel MOS FET High Speed Power Switching REJ03G1092-0300 (Previous: ADE-208-752A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =0.1 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)DG1. Gate2. Drain3. Source1S23Rev.3.00 Sep 07, 2005 page 1 of 7 2SK3212 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 100 VGate to source voltage VGSS 20 VDrain current ID 10 ADrain peak current ID(pulse)Note1 40 ABody-drain diode reverse drain current IDR 10 AAvalanche current IAP Note3 10 AAvalanche energy EAR Note3 10 mJChannel dissipation Pch Note2 20 WChannel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW

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