View 2sk3214 datasheet:

2SK3214Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-763(Z)Target Specification1st. EditionDecember 1998Features Low on-resistanceRDS =130m typ. High speed switching 4V gate drive device can be driven from 5V sourceOutlineTO220ABDG1. Gate12. Drain(Flange)23. Source3S2SK3214Absolute Maximum Ratings (Ta = 25 C)Item Symbol Ratings UnitDrain to source voltage VDSS 200 VGate to source voltage VGSS 20 VDrain current ID 10 ADrain peak current ID(pulse)Note1 40 ABody-drain diode reverse drain current IDR 10 AAvalanche current IAP Note3 10 AAvalanche energy EAR Note3 6.6 mJChannel dissipation Pch Note2 50 WChannel temperature Tch 150 CStorage temperature Tstg 55 to +150 CNote: 1. PW 10 s, duty cycle 1 %2. Value at Tc = 25 C3. Value at Tch = 25 C, Rg 50El

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