View 2sk3272-01sj-01s-01l datasheet:

2SK3272-01L,S,SJ200509N-CHANNEL SILICON POWER MOSFETTrench Power MOSFETOutline DrawingsFeaturesHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerAvalanche-proofSee to P4ApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25C unless otherwise specified)Item Symbol Rating Unit RemarksEquivalent circuit schematicDrain-source voltage VDS 60 VVDSX 30 V VGS=-20VDrain(D)Continuous drain current ID 80 APulsed drain current ID[puls] 320 AGate-source peak voltage VGS +30/-20 Gate(G) VMaximum avalanche energy EAV 484.3 mJ *1Maximum power dissipation PD 135 WOperating and storage Tch +150 CSource(S)temperature range Tstg -55 to +150C*1 L=101H, Vcc=24VElectrical characteristics (Tc =25C unless

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