View 2sk3472 datasheet:

2SK3472 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK3472 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 4.0 m (typ.) High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDSS 450 VDrain-gate voltage (RGS = 20 k) VDGR 450 VGate-source voltage VGSS 30 VDC (Note 1) ID 1 ADrain current Pulse (Note 1) IDP 2 ADrain power dissipation (Tc = 25C) PD 20 WSingle-pulse avalanche energy EAS 122 mJ(Note 2)JEDEC Avalanche current IAR 1 AJEITA SC-64Repetitive avalanche energy (Note 3) EAR 2 mJTOSHIBA 2-7B1BChannel temperature Tch 150 CWeight:

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