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2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. Output power: PO = 7.0 W (min) Gain: GP = 11.4dB (min) Drain efficiency: D = 60% (min) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 20 VGain-source voltage VGSS 10 VDrain current ID 3 APower dissipation PD (Note 1) 20 W JEDEC Channel temperature Tch 150 CJEITA Storage temperature range Tstg -45 to 150 C TO

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