View 2sk3847 datasheet:

2SK3847 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK3847 Switching Regulator, DC/DC Converter and Motor Drive Unit: mmApplications Low drain source ON resistance : RDS (ON) = 12 m (typ.) High forward transfer admittance : |Yfs| = 36 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 40 V) Enhancement mode : Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 40 V Drain-gate voltage (RGS = 20 k) VDGR 40 V Gate-source voltage VGSS 20 V DC (Note 1) ID 32 A Drain current Pulse (Note 1) IDP 96 A Drain power dissipation PD 30 W JEDEC Single-pulse avalanche energy EAS 47 mJ JEITA (Note 2) TOSHIBA 2-10S1B Avalanche current IAR 32 A Repetitive avalanche energy (Note 3) EAR 3 mJ Weight: 1.5 g (typ.) Chann

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