View 2sk3904 datasheet:

2SK3904 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3904 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.2 (typ.) High forward transfer admittance: Yfs = 9.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDSS 450 VDrain-gate voltage (RGS = 20 k) VDGR 450 VGate-source voltage VGSS 30 VDC (Note 1) ID 19 Drain current A 1. GATE Pulse (Note 1) IDP 76 2. DRAIN (HEATSINK) 3. SOURCE Drain power dissipation (Tc = 25C) PD 150 WSingle pulse avalanche energy JEDEC EAS 820 mJ(Note 2)JEITA SC-65Avalanche current IAR 19 ATOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) E

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