View 2sk4013 datasheet:
2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) 2SK4013 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 640 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 800 VDrain-gate voltage (RGS = 20 k) VDGR 800 VGate-source voltage VGSS 30 VDC (Note 1) ID 6 1: Gate Drain current A 2: Drain Pulse (Note 1) IDP 18 3: Source Drain power dissipation (Tc = 25C) PD 45 WSingle pulse avalanche energy JEDEC EAR 317 mJ(Note 2)JEITA SC-67Avalanche current IAR 6 ATOSHIBA 2-10U1BRepetitive avalanche energy (Note 3) EAR 4.5 mJWeight
Keywords - ALL TRANSISTORS DATASHEET
2sk4013.pdf Design, MOSFET, Power
2sk4013.pdf RoHS Compliant, Service, Triacs, Semiconductor
2sk4013.pdf Database, Innovation, IC, Electricity



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet