View 2sk4013 datasheet:

2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) 2SK4013 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 640 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 800 VDrain-gate voltage (RGS = 20 k) VDGR 800 VGate-source voltage VGSS 30 VDC (Note 1) ID 6 1: Gate Drain current A 2: Drain Pulse (Note 1) IDP 18 3: Source Drain power dissipation (Tc = 25C) PD 45 WSingle pulse avalanche energy JEDEC EAR 317 mJ(Note 2)JEITA SC-67Avalanche current IAR 6 ATOSHIBA 2-10U1BRepetitive avalanche energy (Note 3) EAR 4.5 mJWeight

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