View 2sk4016 datasheet:

2SK4016 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS VI) 2SK4016 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDSS 600 VDrain-gate voltage (RGS = 20 k) VDGR 600 VGate-source voltage VGSS 30 VDC (Note 1) ID 13 Drain current A Pulse (t = 1 ms) 1: Gate IDP 52 (Note 1)2: Drain 3: Source Drain power dissipation (Tc = 25C) PD 50 WSingle-pulse avalanche energy EAS 1033 mJ JEDEC (Note 2)Avalanche current IAR 13 A JEITA SC-67Repetitive avalanche energy (Note 3) EAR 5.0 mJTOS

Keywords - ALL TRANSISTORS DATASHEET

 2sk4016.pdf Design, MOSFET, Power

 2sk4016.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sk4016.pdf Database, Innovation, IC, Electricity