View 2sk4113 datasheet:

2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV) 2SK4113 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 900 VDrain-gate voltage (RGS = 20 k) VDGR 900 VGate-source voltage VGSS 30 VDC (Note 1) ID 5 Drain current A Pulse (t = 1 ms) IDP 15 (Note 1)Drain power dissipation (Tc = 25C) PD 45 W Single pulse avalanche energy EAS 595 mJ(Note 2)JEDEC Avalanche current IAR 5 AJEITA SC-67Repetitive avalanche energy (Note 3) EAR 4.5 mJTOSHIBA 2-10R1BChannel temperature Tch 150 C

Keywords - ALL TRANSISTORS DATASHEET

 2sk4113.pdf Design, MOSFET, Power

 2sk4113.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sk4113.pdf Database, Innovation, IC, Electricity