View 3dd207 datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD207DESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 60 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current-Continuous 5 ACP Total Power Dissipation@T =75 50 WD CT Max.Junction Temperature 150 JT Storage Temperature -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITThermal Resistance,Junction to Case 1.5 /WRth j-c1isc websitewww.iscsemi.com isc & iscsemi is

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