View 3dd523 datasheet:

isc Silicon NPN Power Transistor 3DD523DESCRIPTIONExcellent safe operating areaLow Collector-Emitter Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBOV Collector-Emitter Voltage 150 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 10 ACCollector Power DissipationP 100 WC@ T =25CT Junction Temperature 150 JStorage Temperature Range -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITThermal Resistance,Junction to Case 1.52 /WRth j-c1isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor 3DD523ELECTRICAL CHAR

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