View 3dk2222a datasheet:

3DK2222A(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 4.45 2. BASE 5.21 3. COLLECTOR 4.322.92 5.33FeaturesMIN Epitaxial planar die construction 3.43MINMAXIMUM RATINGS (TA=25 unless otherwise noted) 2.412.67Symbol Parameter Value Units3.182.034.19VCBO Collector-Base Voltage 75 V2.671.14VCEO Collector-Emitter Voltage 40 V 1.402.032.67VEBO Emitter-Base Voltage 6 VDimensions in inches and (millimeters)IC Collector Current -Continuous 600 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 10uA , IE=0 75 VCollector-emitter breakdown voltage V(BR)CEO* IC= 10mA , IB=0 40 VEmitter-base breakdown

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