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View am3407pe datasheet:

am3407peam3407pe

Analog Power AM3407PEP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features:rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)34 @ VGS = -4.5V -5 Low thermal impedance-2048 @ VGS = -2.5V -3 Fast switching speedTypical Applications: Battery Powered Instruments Portable Computing Mobile Phones GPS Units and Media PlayersDrain: 1,2,5,6 Gate: 3TSOP6Source: 4ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitsDrain-Source Voltage VDS -20VGate-Source Voltage VGS12TA=25C-5IDContinuous Drain Current aTA=100C A-3.3Pulsed Drain Current b IDM-20IS-1 AContinuous Source Current (Diode Conduction) aTA=25C PD1.40 WPower Dissipation aOperating Junction and Storage Temperature Range TJ, Tstg -55 to 150 CTHERMAL RESISTANCE RATINGSParameter Symbol

 

Keywords - ALL TRANSISTORS DATASHEET

 am3407pe.pdf Design, MOSFET, Power

 am3407pe.pdf RoHS Compliant, Service, Triacs, Semiconductor

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