View ao3407-3 datasheet:

SMD Type ICSMD Type MOSFETP-Channel Enhancement MOSFET AO3407 (KO3407)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13FeaturesVDS (V) = -30VID = -4.1 A1 2+0.02+0.10.15 -0.02RDS(ON) 52m (VGS = -10V) 0.95 -0.1D 1.9+0.1-0.2RDS(ON) 87m (VGS = -4.5V)1. Gate2. SourceG 3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V Gate-Source Voltage VGS 20 Continuous Drain Current Ta = 25 -4.1IDA Ta = 70 -3.5 Pulsed Drain Current IDM -20 Power Dissipation Ta = 25 1.4PD W Ta = 70 1 Thermal Resistance.Junction- to-Ambient t 10s 90RthJA Steady State 125 /W Thermal Resistance.Junction- to-Lead RthJL 60 Junction Temperature TJ 150Storage Temperature Range Tstg -55 to 1501www.kexin.com.cn0.4+0.2+0.22.8-0.11.6-0.10.55+0.21.1-0.

Keywords - ALL TRANSISTORS DATASHEET

 ao3407-3.pdf Design, MOSFET, Power

 ao3407-3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ao3407-3.pdf Database, Innovation, IC, Electricity