View apt10025jlc datasheet:
APT10025JLC1000V 34A 0.250WTMPOWER MOS VIPower MOS VITM is a new generation of low gate charge, high voltageN-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,"UL Recognized"delivers exceptionally fast switching speeds.ISOTOPD Lower Gate Charge Lower Input Capacitance Faster Switching Easier To DriveG 100% Avalanche Tested Popular SOT-227 PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT10025JLC UNITVDSS Drain-Source Voltage1000 VoltsID Continuous Drain Current @ TC = 25C34AmpsIDM Pulsed Drain Current 1136VGS Gate-Source Voltage Continuous30VoltsVGSM Gate-Source Voltage Transient40Total Power Dissip
Keywords - ALL TRANSISTORS DATASHEET
apt10025jlc.pdf Design, MOSFET, Power
apt10025jlc.pdf RoHS Compliant, Service, Triacs, Semiconductor
apt10025jlc.pdf Database, Innovation, IC, Electricity



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet