View apt10025pvr datasheet:

APT10025PVR1000V 33A 0.250POWER MOS VP-PackPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower LeakageGSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT10025PVR UNITVDSS Drain-Source Voltage1000 VoltsID Continuous Drain Current @ TC = 25C33AmpsIDM Pulsed Drain Current 1132VGS Gate-Source Voltage Continuous30VoltsVGSM Gate-Source Voltage Transient40Total Power Dissipation @ TC = 25C 625 WattsPDLinear Derating Factor 5.0 W/CTJ,TSTG Operating and Storage Junction Temperature Range-55 to 150CTL

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